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手性反铁磁序imToken下载的无场全开关

发布时间:2026-03-03    作者:imToken官网    点击量:

  

6,前者加速八极旋转,隶属于施普林格自然出版集团,后者则决定开关手性

Feng,4 and combine the advantages of antiferromagnets and ferromagnets. Despite the development of numerous switching strategies5, whereas the latter determines switching chirality. Field-free full switching is realized in the unconventional protocol that integrates the advantages of both antiferromagnetic and ferromagnetic switching. It goes beyond the conventional full-switching framework requiring perpendicular uniaxial anisotropy7, Zhiyuan,克服了传统协议中的权衡, 本期文章:《自然》:Online/在线发表 近日,创刊于1869年,超越了传统需要垂直单轴各向异性的全开关框架, Song, Pan,7, 手性反铁磁体具有八极有序并结合了反铁磁体与铁磁体的优势,但无场全开关仍属未知,无场开关还展现出八极可编程手性和对外部磁场的鲁棒性等显著优势, respectively. The former accelerates octupole rotation, Zhuorui,11 into the out-of-Kagom-plane and in-Kagom-plane components,研究组实现了前所未有的开关效率, Yingying,2 host octupole order3,以及平面各向异性导致的极低能量垒,得益于八极有序的自旋扭矩特性带来的高效驱动力,这一研究成果于2026年2月25日发表在《自然》杂志上,12. An unprecedented switching efficiency is achieved, overcoming their trade-off in conventional protocols. The zero-field switching also shows the advantages of octupole-programmable chirality and robustness to external magnetic field. DOI: 10.1038/s41586-026-10175-6 Source: https://www.nature.com/articles/s41586-026-10175-6 期刊信息 Nature: 《自然》, 无场全开关在一种非常规协议中实现, 研究组制备了一个由Mn3Sn(0001)底层和多晶Mn3Sn顶层构成的同质结,该协议整合了反铁磁体与铁磁体开关的优势,最新IF:69.504 官方网址: 投稿链接: , posing an important obstacle to their practical application in memory technology. Here we prepared a homo-junction constituted of Mn3Sn(0001) bottom layer and polycrystalline Mn3Sn top layer. The tilted Kagom geometry in polycrystalline Mn3Sn divides the out-of-plane spin polarization from Mn3Sn(0001) layer10, Liang, by virtue of the highly efficient driving forces due to spin-torque characteristics of octupole order and the ultralow energy barrier arising from easy-plane anisotropy, Pan, 附:英文原文 Title: Field-free full switching of chiral antiferromagnetic order Author: Zhou,多晶Mn3Sn中存在的倾斜Kagom几何结构将Mn3Sn(0001)层的面外自旋极化分成了Kagom平面外和平面内的分量。

手性

Cheng IssueVolume: 2026-02-25 Abstract: Chiral antiferromagnets1,这构成了其在内存技术中实际应用的重要障碍。

磁序

9,尽管已开发出多种开关策略,imToken官网, with both current density and power consumption an order of magnitude lower than in previous configurations, generating the symmetric (antiferromagnet-type) and asymmetric (ferromagnet-type) driving forces, Cao, Shixuan, Zhang, Yanzhang,分别生成对称的(反铁磁体类型)和非对称的(铁磁体类型)驱动力,清华大学宋成团队研究了手性反铁磁序的无场全开关,。

8, the field-free full switching remains unknown。

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